We report on the deposition of thin titanium carbide films on 60 mm and 100
mm Si wafers by KrF laser ablation of titanium targets in low-pressure (0.1
Pa) CH4 and C2H2 atmospheres, and on their characterization.
The targets were titanium foils (purity 99.6%). Si (111) wafers, 60 and
100 mm in diameter, were used as substrates. Film characteristics
(thickness, composition and crystalline structure) were studied as a
function of the carbon-containing gas (C2H2 or CH4), laser
fluence (4 or 6 J/cm2), substrate temperature (20 or 250 °C) and
target-to-substrate distance (70–120 mm). Continuous, well adhesive
polycrystalline TiC films were deposited even without any heating of the
substrate. Films deposited in C2H2 ambient atmosphere are better
crystallized and less prone to surface oxidation with respect to films
deposited in CH4 atmosphere, in otherwise identical conditions.